GaAs光电阴极激活时Cs的吸附效率研究

从NEA GaAs光电阴极的激活光电流曲线发现,当系统真空度不很高时,在首次Cs激活阶段,表面掺杂浓度较低的阴极材料,其光电流产生需要的时间也较长.同时,随着系统真空度的提高,这种时间上的差异又变得不再明显.该现象表明,Cs原子在阴极表面的吸附效率同表面层掺杂浓度以及系统真空度之间有直接的联系.为定量分析这种关系,本文根据实验数据建立了Cs在阴极表面吸附效率的数学模型,利用该模型仿真的结果同实验现象非常符合.该研究对进一步开展变掺杂阴极结构设计和制备工艺研究具有重要的价值和意义. 关键词： GaAs光电阴极 吸附效率 真空度 表面掺杂浓度     

Dissipation of a two-mode squeezed vacuum state in the single-mode amplitude damping channel

We explore how a two-mode squeezed vacuum state sechθ e^{a+b+ tanh θ} |00> evolves when it undergoes a singlemode amplitude dissipative channel with rate of decay κ. We find that in this process not only the squeezing parameter decreases, tanh θ → e^-κt tanh θ, but also the second-mode vacuum state evolves into a chaotic state exp{b⁺bln[1 - e^-2κt tanh² θ]}. The outcome state is no more a pure state, but an entangled mixed state.     

Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD

In_0.82Ga_0.18As epilayers were grown on InP substrates using a two-step growth technique by LP-MOCVD. A homogeneous low-temperature (450 °C) In_0.82Ga_0.18As buffer layer was introduced to improve the crystalline quality of epilayers. The influence of low-temperature buffer layer deposition condition, such as thermal annealing duration, on the crystalline quality of the In_0.82Ga_0.18As epilayer was investigated. Double-crystal X-ray diffraction measurement, Hall measurement, and Raman scattering spectrum were used to evaluate the In_0.82Ga_0.18As epilayers. Atomic force microscope was used to study the surface morphology. It is found that the In_0.82Ga_0.18As epilayer, with buffer layer thermal annealing for 5 min, exhibits the best crystalline quality. The change of the surface morphology of the buffer layer after thermal annealing treatment was suggested to explain the phenomenon.     

High efficiency white luminescence of alumina doped ZnO

The application of alumina-doped ZnO (AZO) films as luminescent material for large area lighting sources has been evaluated. Thin films were grown on quartz using magnetron sputtering and subsequently annealed under argon atmosphere in a rapid thermal annealing experiment. Below 550 °C, red-shift of the optical band gap and increase of the visible emission are observed in agreement with Al diffusion and formation of interstitial oxygen atoms. At temperatures higher than 800 °C, diffusion is activated and Ostwald ripening leads to the formation of larger grains and an increase of the crystalline phase. The photoluminescence (PL) intensity is enhanced, specifically in the UV range. As a result the emission spectrum of AZO thin films can be adjusted by the annealing conditions, with equal contributions from the UV and orange parts of the PL spectrum resulting in an efficient white emission as quantified using the color space map of the Commission Internationale de l'Éclairage.     

基于热学理论的微型真空检测器件的研究

介绍了一种基于热学知识设计的表面薄膜微型MEMS皮拉尼计,并将其用于圆片级真空封装腔体的真空度测量中。为了设计灵敏度较高的皮拉尼计,对不同结构的皮拉尼计的热量分布进行了数值计算与分析,并最终完成了加工。此皮拉尼计的结构和加工工艺比较简单,能用于一般的MEMS真空封装中。实验结果显示该皮拉尼计可以测量1-10^5Pa的真...     

Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process

The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the reverse body resistance of a silicon micro-strip detector was significantly increased, which means that the performance of the detector was improved.     

退火对非故意掺杂4H-SiC外延材料386 nm和388 nm发射峰的影响

10 K条件下,采用光致发光(PL)技术研究了不同退火处理后非故意掺杂4H-SiC外延材料的低温PL特性.结果发现,在370—400 nm范围内出现了三个发射峰,能量较高的峰约为3.26 eV,与4H-SiC材料的室温禁带宽度相当.波长约为386 nm和388 nm的两个发射峰分别位于~3.21 eV和~3.19 eV,与材料中的N杂质有关.当退火时间为30 min时,随退火温度的升高,386 nm和388 nm两个发射峰的PL强度先增加后减小,且退火温度为1573 K时,两个发射峰的PL强度均达到最大. 关键词： 光致发光 退火处理 能级 4H-SiC     

退火处理Fe43Co43Hf7B6Cu1非晶合金的正电子湮没研究

对熔体急冷法制备的Fe₄₃Co₄₃Hf₇B₆Cu₁非晶合金进行了200,300,400和500 ℃保温30 min的退火处理,用正电子湮没寿命谱、X射线衍射、穆斯堡尔谱等方法研究了退火后试样的结构及结构缺陷变化.结果表明,在非晶合金的制备态,正电子主要在非晶基体相空位尺寸的自由体积中湮没,湮没寿命τ₁为158.4 ps,强度I₁关键词： 43Co₄₃Hf₇B₆Cu₁非晶')" href="#">Fe₄₃Co₄₃Hf₇B₆Cu₁非晶 退火处理 正电子湮没寿命 结构与结构缺陷     

Stress-MI and domain studies in Co-based nanocrystalline ribbons

A systematic investigation of the influence of different types of annealing on the magnetoimpedance (MI) effect in melt-spun (Co_1−xFe_x)₈₉Zr₇B₄ [x=0, 0.025, 0.05] and (Co_0.88Fe_0.12)_78.4Nb_2.6Si₉B₉Al ribbons has been carried out in the frequency range 500 kHz-13 MHz and under dc magnetic fields (H_dc) up to 80 Oe. In the stress annealed ribbons, the strain-induced transverse anisotropy is seen to result in large MI. Magnetic domains were investigated in the ribbons through magnetic force microscopy.     

Rapid thermal annealing effects on the structural and optical properties of Na–N codoped ZnO films

Polycrystalline ZnO thin films codoped with Na and N were obtained by chemical bath deposition. The structural characteristic and the optical properties of the rapid thermal annealed ZnO:(Na,N) films were investigated by X-ray diffraction, scanning electron microscopy, energy dispersive spectrometer (EDS), Raman spectrum and room-temperature photoluminescence. After RTA treatment, the XRD spectra showed a continuous decrease of the full- width at half-maximum (FWHM) of the (0 0 2) diffraction peak of the ZnO:(Na,N) film. The Raman spectra revealed that the intensity of the mode around 582 cm⁻¹ increased with the increase of the RTA temperature. The PL spectra showed different trends in the UV luminescence of ZnO:(Na,N) films after RTA treatments.